Improvement in the photocurrent collection due to enhanced absorption of light by synthesizing staggered layers of silver nanoclusters in silicon

Mangal S. Dhoubhadel, Wickramaarachchige J. Lakshantha, Sherard Lightbourne, Francis D'Souza, Bibhudutta Rout, Floyd D. McDaniel

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Citations (Scopus)


The quest for increased efficiency of solar cells has driven the research in synthesizing photovoltaic cells involving Si based materials. The efficiency of solar cells involving crystalline Si is stalled around 25% for the last decade. Recently Shi et al. had shown that light trapping can be enhanced by fabricating double layers of Ag nanoparticles in silicon based materials. The light trapping is critically important in a photo devices such as solar cells in order to increase light absorption and efficiency. In the present work, we report enhancement in the absorption of light in Ag ion implanted Si substrates. Multiple low energies Ag ions, ranging from ∼80 keV to ∼30 keV, with different fluences ranging from ∼1 × 1016 to ∼1 × 1017 atoms/cm2 were sequentially implanted into commercially available Si (100) substrates followed by post-thermal annealing to create different sizes of Ag nanoclusters (NC) at different depths in the top 100 nm of the Si. The absorbance of light is increased in Ag implanted Si with a significant increase in the current collection in I-V (current-voltage) photo switching measurements. The experimental photovoltaic cells fabricated with the Ag-implanted Si samples were optically characterized under AM (air mass) 1.5 solar radiation conditions (∼1.0 kW/m2). An enhancement in the charge collection were measured in the annealed samples, where prominent Ag NCs were formed in the Si matrix compared to the as-implanted samples with amorphous layers. We believe the enhancement of the photo-current density from the samples with Ag NC is due to the improvement of efficiency of charge collection of e--h+ pairs produced by the incident light.

Original languageEnglish
Title of host publicationRadiation Physics
Subtitle of host publicationXI International Symposium on Radiation Physics
EditorsGuillermo Espinosa, Carlos Vazquez Lopez, Jorge A. Lopez
PublisherAmerican Institute of Physics Inc.
ISBN (Electronic)9780735413184
Publication statusPublished or Issued - 23 Jul 2015
Externally publishedYes
Event11th International Symposium on Radiation Physics, ISRP 2015 - Ciudad Juarez, Chihuahua, Mexico
Duration: 4 Mar 20156 Mar 2015

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Conference11th International Symposium on Radiation Physics, ISRP 2015
CityCiudad Juarez, Chihuahua


  • Ag nanoclusters
  • I-V
  • Ion implantation
  • Photo-current

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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