Depth profile investigation of β-FeSi2 formed in Si(1 0 0) by high fluence implantation of 50 keV Fe ion and post-thermal vacuum annealing

Wickramaarachchige J. Lakshantha, Venkata C. Kummari, Tilo Reinert, Floyd D. McDaniel, Bibhudutta Rout

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A single phase polycrystalline β-FeSi2 layer has been synthesized at the near surface region by implantation in Si(1 0 0) of a high fluence (∼1017 atoms/cm2) of 50 keV Fe ions and subsequent thermal annealing in vacuum at 800 °C. The depth profile of the implanted Fe atoms in Si(1 0 0) were simulated by the widely used transportation of ions in matter (TRIM) computer code as well as by the dynamic transportation of ions in matter code (T-DYN). The simulated depth profile predictions for this heavy ion implantation process were experimentally verified using Rutherford Backscattering Spectrometry (RBS) and X-ray Photoelectron Spectroscopy (XPS) in combination with Ar-ion etching. The formation of the β-FeSi2 phase was monitored by X-ray diffraction measurements. The T-DYN simulations show better agreement with the experimental Fe depth profile results than the static TRIM simulations. The experimental and T-DYN simulated results show an asymmetric distribution of Fe concentrated more toward the surface region of the Si substrate.

Original languageEnglish
Pages (from-to)33-36
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume332
DOIs
Publication statusPublished - 1 Aug 2014
Externally publishedYes

Keywords

  • Ion implantation
  • RBS
  • T-DYN
  • TRIM

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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